0.8um 1P2MCMOS process platform。0.8um gate length，single poly, double metal，application for LED driver，Core/IO voltage：5.0V,。FMIC has the elaborate design rule document.

 

 

Process features

Ø     Single poly, double metal, twin well.

Ø     Core/IO voltage：5.0V,  Vds>5V, Vgs>5V.

Ø     Substrate silicon material is N-type <100>, 4-7ohm-cm.

Ø     11 masks and 12 photo layers.

Ø     N-Type mask Rom code for option.

Ø     Standard LOCOS process for isolation.

Ø     200A gate oxide, poly for gate electrode.

Ø     NLDD, PLDD and spacer structure.

Ø     Ti/TiN/AlSiCu/TiN stack layer for interconnection.

Ø     Oxide and nitride stack layer for passivation.

Ø     IMD planarization process.

 

Applications

Ø     DC-DC Converter

Ø     Power management product

Ø     Battery protection IC

Ø     LED Driver