0.4um CMOS process platform。0.4um Gate length，Single poly, single metal。Embedded RC oscillator，crystal oscillator、32*4 bit RAM, 368K*10 program ROM，Voice frequency：1.5K~27K。Core/IO voltage： 5.0V。FMIC has the elaborate design rule document.

 

 

Process features

Ø      Single poly, single metal, twin well.

Ø      Core/IO voltage：3.3~5.0V , VDS>5V, VGS>5V

Ø      Substrate silicon material is p-type <100>, 15-25ohm-cm.

Ø      11 masks and 14 photo layers.

Ø      N-Type mask Rom code for option.

Ø      Standard LOCOS process for isolation.

Ø      125A gate oxide, polycide for gate electrode.

Ø      NLDD, PLDD and spacer structure.

Ø      Ti/TiN/AlSiCu/TiN stack layer for interconnection.

Ø      Oxide and nitride stack layer for passivation

 

Applications

Ø      RC oscillator， crystal oscillator

Ø      32*4 bit RAM, 368K*10 program ROM

Ø      Voice frequency：1.5K~27K