0.4um CMOS process platform。0.4um Gate length,Single poly, single metal。Embedded RC oscillator,crystal oscillator、32*4 bit RAM, 368K*10 program ROM,Voice frequency:1.5K~27K。Core/IO voltage: 5.0V。FMIC has the elaborate design rule document.
Process features
Ø Single poly, single metal, twin well.
Ø Core/IO voltage:3.3~5.0V , VDS>5V, VGS>5V
Ø Substrate silicon material is p-type <100>, 15-25ohm-cm.
Ø 11 masks and 14 photo layers.
Ø N-Type mask Rom code for option.
Ø Standard LOCOS process for isolation.
Ø 125A gate oxide, polycide for gate electrode.
Ø NLDD, PLDD and spacer structure.
Ø Ti/TiN/AlSiCu/TiN stack layer for interconnection.
Ø Oxide and nitride stack layer for passivation
Applications
Ø RC oscillator, crystal oscillator
Ø 32*4 bit RAM, 368K*10 program ROM
Ø Voice frequency:1.5K~27K