1.0um 800V process platform integrated LVCMOS, MV CMOS, HV DMOS and other option device such as High resistance POLY resistor and Zener Diodes.  It is a good choice for customer to design off-line AC/DC power source and LED driver.

 

 

Process features：

Ø      Integrated 800V power VDMOS device, BV higher than 900V.

Ø      VLD (Varied Lateral Doping) for termination can shrink 1/3 chip area.

Ø      Thick and high resistivity epitaxial layer used as starting material.

Ø      Twin well, single poly, single metal, backside grinding and backside metal.

Ø      11 masks and 12 photo layers.

Ø      LV/MV/HV NMOS integrated, including asymmetrical and symmetrical structure, enhanced and depletion type.

Ø      Gate oxide capacitor, zener diode, low poly resistor integrated.

Ø      Isolation between high voltage and low voltage devices are reliable.

1)   Application

Ø      Power management

Ø      Display driver

Ø      Automobile electronics