200V Si based GaN is the platform of GaN technology of FMIC, mainly used in power management of automotive electronics, with high efficiency, high temperature working range and low on-state resistance, and can provide design services complete.
Process features
Ø High performance Si based GaN technology
Ø Normally Off operation
Ø Gate drive compatible with existing Silicon solutions: +/‐10V,+/‐15V,etc.
Ø Vgs(th) can be tailored with Si FET: high enough to avoid C*dV/dt induced turn on
Ø Anti-parallel diode function included: lower reverse recovery losses than Si switches
Ø Low Gate Charge
Ø Ultra Low On-Resistance
Ø 250°C Operating Temperature
Ø Fast Switching
Application
Ø RF
Ø Motor
Ø Photovoltaic converter