200V Si based GaN is the platform of GaN technology of FMIC, mainly used in power management of automotive electronics, with high efficiency, high temperature working range and low on-state resistance, and can provide design services complete.

Process features

Ø  High performance Si based GaN technology

Ø  Normally Off operation

Ø  Gate drive compatible with existing Silicon solutions: +/‐10V,+/‐15V,etc.

Ø  Vgs(th) can be tailored with Si FET: high enough to avoid C*dV/dt induced turn on

Ø  Anti-parallel diode function included:  lower reverse recovery losses than Si switches

Ø  Low Gate Charge

Ø  Ultra Low On-Resistance

Ø  250°C Operating Temperature

Ø  Fast Switching

Application

Ø  RF

Ø  Motor

Ø  Photovoltaic converter