IGBT (insulated gate bipolar transistor) as a new power semiconductor field control self turn-off devices, the device performance with high speed bipolar set power MOSFET low resistance in one, get very wide range of applications in a variety of power conversion, FMIC has the product technology R & D capability.

Process features

Ø  NPT technology

Ø  Collector-Emitter Voltage：600V～1700V

Ø  Larger drive current

Ø  Low saturation voltage

Ø  Fast switching speed

Application

Ø  Induction Cooker

Ø  Motor drive

Ø  Electric welding machine

Ø  Inverter