MOS SBD has low leakage current, low threshold voltage, high performance and low cost, can completely replace the traditional low-voltage Schottky, FMIC has this kind of product design R & D capability.
Process features
Ø 0.5um MOS Schottky technology
Ø 4 photo layers.
Ø Low resistivity Epitaxial silicon material.
Ø A hybrid diode ,PN Junction and Schottky.
Ø Low power
Ø Ultra-high-speed
Application
Ø MB (board), Mobile, Low voltage electronics rectifier
Ø PC﹑NB power supply, Battery charger
Ø LCD TV, AC to DC rectifier