MOS SBD has low leakage current, low threshold voltage, high performance and low cost, can completely replace the traditional low-voltage Schottky, FMIC has this kind of product design R & D capability.

Process features

Ø  0.5um MOS Schottky technology

Ø  4 photo layers.

Ø  Low resistivity Epitaxial silicon material.

Ø  A hybrid diode ，PN Junction and Schottky.

Ø  Low power

Ø  Ultra-high-speed

Application

Ø  MB (board), Mobile, Low voltage electronics rectifier

Ø  PC﹑NB power supply,  Battery charger

Ø  LCD TV, AC to DC rectifier